| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 가을 (10/11 ~ 10/12, 일산킨텍스) |
| 권호 |
32권 2호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Electrical Reliability Study of Nanoporous Organosilicate Dielectrics |
| 초록 |
The next generation semiconductors call for ultra-low dielectric materials to reduce the RC delay and cross-talk caused by the extremely small circuit dimension. In order to decrease the dielectric constant, we introduced the porogen into dielectric material. Ultra-low dielectrics (k ＜ 2.3) with desirable pore morphologies and high mechanical strength were prepared using a β-cyclodextrin based reactive porogen and the copolymer of methyl trimethoxysilane with 25 mol% of bis-1,2-triethoxysilyl ethane was used as an organosilicate matrix. We examined electrical reliability using VRDB (voltage ramping dielectric breakdown) test with the same matrix but with different porosity. We made a comparative study of dielectric breakdown at Cu and Ta electrode, and on 100 Å and 1000 Å SiO2. VRBD of each dielectric material with different porosity was measured, and we found that the VRBD of Ta electrode system is a little higher than that of Cu electrode system because of the Cu migration. |
| 저자 |
이용준1, 박건우1, 최현상1, 윤도영2, 주영창2, 이희우1
|
| 소속 |
1서강대, 2서울대 |
| 키워드 |
porogen; Reliability; cyclodextrin; dielectric
|
| E-Mail |
|
