| 초록 |
We have fabricated bottom-contact pentacene-based organic field effect transistors by using these SAMs to investigate the effect of hole injection barriers at interface between the metal electrode and the vacuum deposited pentacene films on the performances of OFETs. We have demonstrated a correlation between hole injection barriers at the metal/OSC interface and device parameters such as mobility, threshold voltage and sub-threshold swing. As tuning OFET electrodes with partially fluorinated alkanethiol SAM, bottom-contact OFET device performance was dramatically improved. We have also found that the different pentacene film morphology between bare Au electrodes and SAM-treated Au electrodes on the side slope and the upper surface of the electrodes was another important factor on the device performance of OFETs. Furthermore, in order to avoid the small grain size region near the Au-electrode, photo-lithography was used to have the almost perpendicular profile of Au-electrode. |
