| 학회 | 한국고분자학회 |
| 학술대회 | 2003년 봄 (04/11 ~ 04/12, 연세대학교) |
| 권호 | 28권 1호, p.139 |
| 발표분야 | 고분자 가공/블렌드 |
| 제목 | PMMA/PVdF Blends as High k Materials for OTFT |
| 초록 | As portable electronic devices become more demanding in modern information society, the organic thin film transistor (OTFT) becomes more important as a driving circuit and a switching device due to its flexibility, low cost and low temperature processing. To drive a circuit efficiently under low voltages, high dielectric constant (k) materials are necessary for OTFT. We chose PMMA/PVdF blends as dielectric materials. Crystalline PVdF has relatively high dielectric constant of 8.4 at 1 MHz. However, PVdF can not be used due to high crystallinity, which makes the subsequent patterning process difficult. Therefore, we tried to tailor the electrical properties and morphology by blending PVdF with amorphous PMMA (k = 2.6). PMMA/PVdF blends were completely miscible over the entire range of composition by the existence of single Tg. The blend of PVdF 30 wt% was optimum in view of dielectric constant (k = 4.0) and no crystallinity. Also it was spinning processible on ITO/organic substrate, and there was no change in the morphology even when it was heated to the baking temperature (near 100 ℃) of lithography processes. |
| 저자 | 천건용;김성현;이희우 |
| 소속 | 서강대 |
| 키워드 | OTFT; dielectric; PMMA/PVdF Blend |
