| 초록 |
Here, we have fabricated stable n-channel MoSe2 FETs with a relatively small Vth of -5 V and minimized-hysteresis of 0.5 V. We demonstrated the stable operation by integrating a smart touch sensor circuit composed of piezoelectric P(VDF-TrFE) polymer, the MoSe2 FET, and organic light emitting diode (OLED). In order to minimize the Vth and gate voltage hysteresis of 2D FET, we inserted ultrathin (8.46 nm) polystyrene (PS)-brush layer between MoSe2 channel and 50 nm-thin Al2O3 dielectric. Our MoSe₂ FET has showed a maximum drain-current (ID) of ~9 μA at VDS of 1 V along with a high linear mobility of 11.2 cm2/V s. In the analogue touch sensor circuit gated by piezoelectric film of large scale Al/50 μm-thick P(VDF-TrFE)/ITO/glass, the MoSe₂ FET exhibits high ON/OFF ratio and ON-state ID which quite well demonstrated OLED pixel operation. |
