| 학회 | 한국재료학회 |
| 학술대회 | 2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 | 13권 2호 |
| 발표분야 | 전자재료 |
| 제목 | In-situ diagnosis of tantalum precursors using Fourier transform infrared (FT-IR) spectroscopy |
| 초록 | Tantalum nitride (TaN) has been studied as a gate electrode for its low resistivity and high reliability. TaN has good thermal stability and excellent equivalent oxide thickness (EOT) scalability with high-k dielectric down to sub-1nm regime, which is promising for sub-50nm CMOS. In any case of the film deposition with atomic layer deposition (ALD), the properties of the used precursors are the key factors for the success of the process. In this study, in-situ Fourier transform infrared (FT-IR) spectroscopy was used to study the gas phase reaction with many kinds of precursors (tBu-N=Ta(NEt2)3, tBu-N=Ta(NEtMe)3, etc.) The temperature of the gas cell varied from room temperature to 250°C under various ambient gases, Ar, H2, and NH3. The infrared peaks of the stretching vibration between 4000 and 650 cm-1 were employed to monitor the degree of dissociation of the gaseous precursors. In the case of Ar atmosphere, the C-H binding of methyl group had higher thermal stability than that of ethyl group. The surface species were monitored during TaN ALD using in-situ FT-IR spectroscopy studies. The vibrational spectroscopy revealed the gain and loss of surface species (such as N-C, C-H etc.) as a function of the surface temperature. It was found that the in-situ FT-IR could explain the ALD mechanism of metal nitride films and the incorporation mechanism of nitrogen and impurity (carbon) into the film. |
| 저자 | Sukhoon Kim1, Moonkyun Song2, Shi-Woo Rhee3 |
| 소속 | 1Laboratory for Advanced Molecular Processing (LAMP), 2Department of Chemical Engineering, 3Pohang Univ. of Science and Technology (POSTECH) |
| 키워드 | Ta precursor; TBTDET; TBTEMT; TaN; FT-IR |
