| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Position Effect of Embedded Gold Nanoparticles in InGaZnO Channel on Memory Characteristic |
| 초록 | The nanoparticle oxide memory field effect transistor (NOMFET) using amorphous indium-gallium-zinc-oxide (a-IGZO) have been receiving large attention due to high mobility, large band-gap of up to 3.0 eV, and low-cost fabrication at low temperature. According to recent research trend, nonvolatile memory device containing gold nanoparticles (Au NPs) exhibited enhanced programmable memory characteristics. In this study, we investigated the effect of trap densities in a-IGZO channel included Au NPs on output characteristics, time variant current pulse, etc. The a-IGZO TFTs were fabricated on thermally oxidized (SiO2 thickness of 200 nm) heavily doped silicon (p++ Si) substrates. The a-IGZO layer was deposited by RF magnetron sputtering using a-IGZO (In : Ga : Zn = 1 : 1 : 1) sputtering target and the Au NPs were formed by vacuum evaporation using 99.99 percent pure gold target. It was observed that the threshold voltage of the device with Au NPs (3 nm) on IGZO channel increased about 10 V compared to the device without Au NPs. Therefore, the memory effect can be controllable by varying the location of Au NPs within the a-IGZO channel, which is caused by the different trap densities. In addition, as charge trap sites get closer to IGZO channel, the threshold voltage is shifted to negative direction. The charge trap mechanism controls the hysteretic behavior and these results show the possibility of application in memory devices using floating gate. * This research was supported by the Converging Research Center Program funded by the Ministry of Science, ICT & Future Planning (Project No. 2015054348). |
| 저자 | Jea-Gun Park1, Hyo-Jun Kwon2, Min-won Kim3, Ji-Sun Lee1, Eun-Hee Shim2 |
| 소속 | 1Advanced Semiconductor Materials and Devices Development Center, 2Department of Electronics Engineering, 3Hanyang Univ. |
| 키워드 | Gold Nanoparticle; IGZO; TFT |
