| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | 특별심포지엄 3. 미래 LED 디스플레이재료 심포지엄-오거나이저: 이인환(고려대), 홍영준(세종대) |
| 제목 | Diamond Material for Electronic and Quantum Device Applications |
| 초록 | Recently, diamond has attracted extensive attention as a single crystal semiconductor material for quantum devices as well as electronic devices. For example, diamond-based devices can operate at high temperatures because of its wide band gap (5.5eV) and high thermal stability. Also, diamond is known as an ultimate candidate for ultra-high power and ultra-high frequency electronic device applications, because the BFOM and JFOM, power capability and RF capability for diamond semiconductor are 50,000 and 1,340, respectively, which is approximately 100 times and 3 times higher than those of Si and SiC, respectively. In addition, the nitrogen-vacancy center (NV center) in diamond has been studied for the applications of quantum computing, quantum communication and quantum sensing etc. For example, an individual NV center can be used as a basic unit for a quantum computer, a qubit. Additional potential applications in novel fields of electronics and sensing include spintronics, masers, and quantum sensors etc. The researches for diamond single crystal semiconductor materials and devices in USA, Japan and EU have been supported by the governments for over 10 years. However, there has been almost no government support for diamond semiconductor material research in Korea. In this talk, it is reported the current status and future prospect of diamond single crystal semiconductor material for electronic and quantum device applications. Also, diamond research of the Korea Polytechnic University will be introduced and discussed in the conference. REFERENCES 1. M. Kasu, Progress in Crystal Growth and Characterization of Materials 62 (2016) 317–328 2. T. Kwak and O. Nam et al., Boron-Doped Single-Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using MPCVD, Physica Status Solidi A 2020, 1900973. 3. T. Kwak and O. Nam et al., Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate, Diamond & Related Materials 114 (2021) 108335. |
| 저자 | 남옥현 |
| 소속 | 한국산업기술대 |
| 키워드 | Diamond; Electronic device; Quantum Device |
