| 초록 |
Resistive random access memories(RRAMs) are attracting considerable interest with the possibility of being used for high density and low cost non-volatile memory(NVM). RRAMs store information using resistive switching properties when a voltage is applied, and various researches have been proceeded to enhance the on/off resistance ratio and identifying the mechanism. In this study, we fabricated a Sb2Se3 on Nb-doped SrTiO3 (Nb-STO) substrate which is commonly used as a bottom electrode via pulsed laser deposition (PLD). We confirmed through atomic force microscope (AFM) and scanning electron microscope (SEM) that as the deposition pressure increases, the Sb2Se3 thin films are deposited in the form of a dot with many empty spaces, and this manipulation give rise to the resistive switching property. Even though a thin film deposited in a high vacuum has few resistive switching properties, it has an on/off resistance ratio of 105 if deposited at high pressure. Through current-voltage characteristic analysis, the change in the conduction mechanism in which the resistive switching characteristics appear was confirmed, and the multi-level characteristics in which the on/off resistance ratio varies according to the applied voltage were also confirmed. Therefore, our study reports the resistive switching properties of Sb2Se3 and suggests a new field for resistance based multi-level memory study. |
