| 초록 |
Low voltage operating high-performance organic field-effect transistors (OFETs) are regarded as the building blocks of analog and digital integrated circuits for next generation electronics. To fulfil this, it must have high-k characteristics for increasing the capacitance values to make enough field effect charge, a hydrophobic surface that does not cause charge trapping, and a low leakage current property to guarantee the operating stability. This study demonstrates the new strategy to induce high-k characteristics in highly durable polysilsesquioxane based dielectric materials by permanent dipolar side chain reorientation under electric field and its applications to low voltage driving OFETs showing field-effect mobility as high as 30 cm2 V-1 s-1. In particular, the structural difference of polysilsesquioxane causes distinctiveness in polarization phenomenon, resulting in different hysteresis behaviors during device operation. |
