| 초록 |
Recently, the field of neuromorphic electronic system for mimicking diverse functionalities of biological synapse and massively parallel neural network found in human brain has been emerging as a promising approach toward energy-efficient computing technology [1]. Here, we introduce a new class of artificial synapse as a basic unit for flexible and wearable intelligent device applications. We fabricated a large scale of ferroelectric organic field-effect transistor memory (~ 500 nm total thickness) in a free-standing form using a pentacene and a ferroelectric copolymer, PVDF-TrFE, and utilized it as a free-standing artificial synapse. The device exhibits the reliable switching properties even in free-standing form, and it can be also properly operated on various corrugated surfaces such as a thermal-shrink plastic film, a jelly, a textile, a candy, a teeth brush, and a brain mold. By applying diverse electrical pulses with modulated relative time correlation between pre-synaptic (gate electrode) and post-synaptic neuron (drain electrode), diverse synaptic activities such as STP, LTP, LTD, and STDP have been implemented. Furthermore, it features sustainable synaptic functions for more than 6,000 times of input signals under extreme conditions such as transferred on the corrugated brain-like mold and completely folded with very small banding radius (R = 50 µm) [2]. References 1. S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, W. Lu, Nanoscale Memristor Device as Synapse in Neuromorphic Systems. Nano Lett. 10, 1297-1301 (2010). 2. S. Jang, S. Jang, E.-H. Lee, M. Kang, G. Wang, T.-W. Kim, Ultrathin Conformable Organic Artificial Synapse for Wearable Intelligent Device Applications. ACS Appl. Mater. Interfaces 11, 1071-1080 (2019). |
