| 초록 |
Organic nonvolatile memory transistors have been widely investigated for light-weight, low-cost and flexibility. Especially, electret and nano-floating gate memory have much attetion as next-generation flash storage mediums. Here we demonstrate organic flash memory devices fabricated by inserting various metal oxide nanoparticles between polymer electret and high-k polymer dielectrics; poly(2-vinyl naphthalene(PVN)/Poly(vinylidene fluoride-trifluoroethylene)[P(VDF-TrFE)]. Poly(3-hexylthiophene) was used as p-channel semiconductor in top-gate/bottom contact device structure. The optimized devices offer significant improvement in memory performance such as a large memory window, an excellent retention time and stable switching behavior. In addition, we will also demonstrate that inkjet-printed organic flash memory devices fabricated on flexible plastic substrate show mechanical flexibility and reliable switching performance. |
