| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | F. Display and optic Materials and processing(디스플레이 및 광 재료) |
| 제목 | Improvement in light extraction efficiency of ultraviolet light emitting diodes using patterned n-type GaN substrate with different pattern sizes |
| 초록 | Enhanced performance of ultraviolet (UV) light emitting diodes (LEDs) is achieved using growth of LED structure on patterned n-type GaN substrate (PNS) which promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Improvement in crystal quality and light extraction efficiency (LEE) of UV LEDs fabricated using 200, 250 and 300 nm-sized Silicon-di-oxide (SiO2) patterns on n-type GaN layer are compared. Analysis results suggest that the increase of crystalline property and output power from the PNS LEDs depends on the size of the SiO2 patterns on the n-type GaN substrate. This improvement is due to reduction in dislocation density and enhanced light scattering of the output light from the active layer caused by the nano sized SiO2 patterns integrated inside the LEDs. |
| 저자 | 백광선, Giri Sadasivam Karthikeyan, 이영곤, 이준기 |
| 소속 | 전남대 |
| 키워드 | light emitting diodes |
