| 학회 |
한국화학공학회 |
| 학술대회 |
2010년 가을 (10/21 ~ 10/22, 대전컨벤션센터) |
| 권호 |
16권 2호, p.1608 |
| 발표분야 |
에너지 |
| 제목 |
Deposition of ZnS onto Quantum Dot Sensitized Solar Cells as Barrier of Charge Recombination by high Pressure Free Meniscus Coating |
| 초록 |
Recently,chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) are employed for the deposition Quantum-dot(QD) into TiO2 matrix. In this work, QDs are deposited by liquid carbon dioxide. Extremely low viscosity and surface tension of l-CO2 can lead faster diffusion of CO2 soluble precursor into the mesoporous oxide films. These unique physical properties of l-CO2 have been utilized in thin film deposition and extended its area. CuS, PbS and CdS were deposited as QDs. As a result, QDs were deposited uniformly in mesoporous titania films. Short circuit current can be increased by uniform QDs. Additionally, for improving efficiency of QDSSC, ZnS were deposited by hFMC as recombination barrier. By ZnS treatment, the IV performance was increased. The structural characteristics, the chemical compositions and the light absorption characteristics of the QDs on the TiO2 film were investigated using wide-angle XRD, XPS and UV-Vis spectroscopy. HR-TEM was employed for QDs morphology. EPMA and XPS study were investigated for deposition uniformity. Phototovoltaic performance also analized. |
| 저자 |
장원호1, 조성민1, 김재훈2, 민병권2, 김재덕2, 유기풍1
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| 소속 |
1서강대, 2한국과학기술(연) |
| 키워드 |
supercritical Fluids; Quantum dot; Solar Cells
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| E-Mail |
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| VOD |
VOD 보기 |
| 원문파일 |
초록 보기 |
