| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | The epitaxial growth of GaN film with air tunnel for light extraction efficiency of LEDs and chemical lift-off process |
| 초록 | The efficiency of GaN film-based LEDs is important to improving external quantum efficiency(EQE). In recent years, studies have been actively conducted to identify and improve EQE of LEDs. EQE is composed of internal quantum efficiency(IQE) and light extraction efficiency(LEE). Above all, we have been studied the LEE of GaN film based LEDs. In order to improve the LEE, patterned sapphire substrate(PSS) is widely used as a substrate. However, it causes an increase in the internal temperature. So, lift-off process, which separating sapphire substrate, is essential to lower thermal conductivity from LED chip. In this study, we tried to suppress GaN film growth in the bottom c-plane and to grow GaN film in the (0001) direction at the top of PSS, which looks like an air tunnel shape of GaN film. Finally, chemical lift-off process that used the KOH solution was carried out. Following this process, the experimental results were analyzed by scanning electron microscope(SEM), X-ray diffraction(XRD) and photoluminescence(PL). In conclusion, the growth of GaN film like an air tunnel at the top of PSS was found and the crystallinity of GaN film was confirmed by XRD. This work was supported by the Technology Innovation Program (10067492) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) |
| 저자 | 이두원, 정우섭, 조승희, 고현아, 안민주, 심규연, 강성호, 변동진 |
| 소속 | 고려대 |
| 키워드 | epitaxial growth; light extraction efficiency; LED; chemical lift-off |
