| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
대학원생 구두발표 (영어발표, 발표15분) |
| 제목 |
Large-area buckled MoS2 film on the graphene interface |
| 초록 |
The structure of a MoS2 layer strongly influences the chemical, physical, and electronic properties of the film. Here, we report the preparation of a new buckled structure in edge-oriented MoS2 films over large areas simply by introducing a single graphene layer below the Mo film prior to MoS2 film growth. The buckled film was formed from MoS2 sheets aligned in both the vertical or horizontal directions with respect to the plane of the graphene surface. Vertically aligned MoS2 sheets dominated the bulk of the film, whereas horizontally aligned MoS2 sheets were favored near the graphene surface. The buckled MoS2 film provided a much better catalytic performance compared to smooth MoS2 structures, displaying a decreased onset potential in a hydrogen evolution reaction. Our findings present a new approach to enhancing the properties of MoS2 films by introducing a buckled morphology. This approach may potentially be extended to the creation of buckled structures in other 2D materials. |
| 저자 |
김선준1, 김대우1, 임준원1, 조수연1, 김상욱1, 정희태2
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| 소속 |
1KAIST, 2한국과학기술원 |
| 키워드 |
Graphene; MoS2; Buckled structure; Hydrogen evolution reaction
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| E-Mail |
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