| 초록 |
Block copolymers (BCPs) have potential application to next-generation nanolithography and storage media. To obtain complicated and sophisticated devices with nanolithography by using BCP template, the control of the nanopattern of BCP at a desired area, must be achieved. Here, we introduce a simple method to fabricate a dual nanopattern by spatial control of nanodomain orientation in PS-b-PMMA thin films. We found that when SiOx layer was removed by hydrofluoric acid (HF), which is referred to as “passivated silicon substrate”, its surface tension became the middle of PS and PMMA block, resulting in vertical orientation of lamellar (and cylindrical) nanodomains in thin films. When we used photoresist (PR), followed by HF treatment at a selective area, dual nanopatterns consisting of parallel and vertical oriented cylinders were successfully prepared at a desired area. Finally, we fabricated silicon substrate containing both nanoholes and nanostripes at a desired region. |
