| 학회 |
한국화학공학회 |
| 학술대회 |
2002년 가을 (10/24 ~ 10/26, 서울대학교) |
| 권호 |
8권 2호, p.5515 |
| 발표분야 |
재료 |
| 제목 |
Apporaches to Growth of GaN Substrates |
| 초록 |
The successful growth of single crystal GaN substrates by HVPE on nearly lattice matched LiGaO2 and LiAlO2 substrates is reported. A critical step to obtaining high quality GaN films was initial surface nitridation. A spontaneous releasing technique was developed that leaves freestanding single crystal GaN without mechanical or chemical treatment. In addition, a process was developed to deposit GaN on Si (111) by a two-step low-temperature MOCVD step followed by a low-temperature HVPE growth in the same reactor. It was found that a SiOx compliant interface was needed to relieve stress at the substrate-film interface. It was shown experimentally and theoretically that low-temperature growth prevented the formation of detrimental SiNx. Surface morphology was observed by AFM; the structural quality was analyzed by XRD; the chemical composition was investigated by AES, ESCA and SIMS, and Raman spectroscopy was used to measure residual stresses. |
| 저자 |
Olga Kryliouk, Mike Reed, Mike Mastro, Todd Dann, Tim Anderson
|
| 소속 |
Univ. of Florida |
| 키워드 |
GaN Substrates |
| E-Mail |
|
| VOD |
VOD 보기 |
| 원문파일 |
초록 보기 |
