| 학회 | 한국재료학회 |
| 학술대회 | 2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 | 10권 2호 |
| 발표분야 | 전자부품 |
| 제목 | 감쇠기 응용을 위해 AlN 기판위에 성장시킨 CuNi 박막 저항체의 물리적 전기적 특성 |
| 초록 | Abstract A constantan composition of Cu54Ni46 showing an near zero TCR value was obtained on AlN substrates using a Ni power of 100 W and a Cu power of 50 W by dc magnetron co-sputtering. The grain size increases and resistivity of the films decreases with increasing deposition temperature. The crystallinity of the films definitely influences the TCR value, which is an important parameter in resistor devices. The films deposited at 100oC exhibited a near zero TCR value of approximately 7 ppm/oC and the positive TCR values increased with increasing deposition temperature. The films deposited above 100oC do not exhibit irreversibility of the resistance with increasing deposition temperature. Introduction Copper-nickel alloys with a composition similar to the commercial alloy (constantan) are used for resistive and thermoelectric applications. Recently, this alloy has been applied in thin film configurations for resistive components. Low resistivity and low temperature coefficient of resistance (TCR), which guarantee low and constant electric resistance over a wide range of temperatures, are required in microelectronics, especially in portable terminal or attenuator, for the purpose of saving the consumption of batteries. Thin films of CuNi with approximately 40 wt % Ni have a resistivity ( ρ ) of about 50 μ Ω•cm and a small temperature coefficient of resistance below 50 x 10-6/K. Most pure metals have a positive TCR of several thousand ppm/K. By alloying, the TCR can be reduced and negative TCR occurs in several amorphous metals and in other metastable states like the so-called quasicrystalline materials. The TCR accuracy depends on the precision in both annealing treatment and film composition. Also the degree of amorphism may depend on sputter conditions and therby influence the final TCR. The thin film resistors should be prepared on a suitable substrate for a high frequency microelectronics application. The requirement as a substrate for thin film resistors is a low dielectric loss and a high thermal conductivity. The most well-known substrates for thin film resistors are AlN ceramics having a dielectric loss of 0.0001 at 1 MHz and a thermal conductivity of approximately 190 W/mK. In this study, CuNi thin films are prepared on polished-AlN substrates using dc co-sputtering with Cu and Ni targets. The structural and electrical properties including TCR properties are investigated as a function of the deposition temperature. Acknowledgement This research was supported by the Program for the Training of Graduate Students in Regional Innovation which was conducted by the Ministry of Commerce, Industry and Energy of the Korean Government and was partly supported by the Brain Korea 21 project in 2003. |
| 저자 | 허성기1, 윤순길1, 김동진2, 강병돈2 |
| 소속 | 1충남대, 2케이엠씨 테크놀러지 |
| 키워드 | thin film resistor; attenuator; CuNi |
