| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
전자재료 |
| 제목 |
Electrical and optical properties of ZnO thin films prepared by rf-magnetron sputtering at various oxygen flows |
| 초록 |
Recently, ZnO film has drawn great deal of attention for electrical and optical application due to its excellent properties. However, it has been more required that electrical and optical devices should have structural stabilities. In this study, ZnO films were prepared by rf-magnetron sputtering using Zn target and were controlled to have nonstoichiometric forms in order to observe the electrical and optical property changes. It was found that the electrical properties of the films heavily depend on its carrier concentration and mobility changes were small. From the UV visible spectrophotometer measurement, transmittance of ZnO films increase with increasing oxygen content, together with increase of the oxygen vacancy. Photoluminescence measurement shows that the Zn vacancy has a strong emission at room-temperature. X-ray diffraction (XRD) analysis shows the increase in peak intensity after annealing process and ZnO film has polycrystalline structure at low oxygen content. |
| 저자 |
In-June Kim1, In-Soo Kim2, Se-Young Choi1
|
| 소속 |
1School of New Materials Science and Engineering, 2Yonsei Univ. |
| 키워드 |
ZnO; Photoluminescence; Hall mesurement
|
| E-Mail |
|
