| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Thermal atomic layer deposition of Molybdenum trioxide using metal organic precursor and H2O reactant. |
| 초록 | Recent days, as the semiconductor transistor scaling down attempt reaches its limit, the importance of researching and developing next generation field effect transistors (FETs) is getting higher. The attention to next generation FETs is focusing on the FETs which is based on two-dimensional (2D) materials, like transition metal dichalcogenides (TMDs) or transition metal oxides (TMOs). Transition metal oxides could be applied to a wide range of technological industry. Many kinds of TMOs have been researched and studied for their photocatalytic activities and sizable band gaps (MoO3 : 3.2 eV). Furthermore, a high-K dielectric gate insulator has been investigated to solve the interface issues of 2D(MoS2) based FETs. Thus, MoO3 as a gate material could be obtained better interfacial characteristics of the devices. This experimental introduces a method and the best condition of thermal atomic layer deposition for MoO3 thin film. A 4-inch thermal ALD chamber, named Ginitek was used for MoO3 thin film deposition that consisted of a rotary pump for vacuum system, hot plate for thermal ALD and piping system for precursor / reactant delivery. The rotary pump could reach a base pressure of 0.0004 torr and process pressure of 0.01970 torr with Ar gas 200 sccm feeding. Substrate were 2-inch Si/SiO2 wafer, where the thickness of SiO2 ~300nm. The experimental set temperature of substrate was varied from 300 to 425℃ and the set temperature of precursor and precursor delivery line also had wide rages from 50 to 80℃. Bubbler type canister was part of the precursor delivery and Ar gas (99.999%) 100 sccm was used as a bubbler gas. The film thickness and the density of MoO3 thin film were measured by X-ray reflectivity (XRR). The film composition was confirmed through X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). To obtain the dielectric constant, C-V data were measured. And the leakage current was checked by I-V measurements. |
| 저자 | 이정훈, 최연식, 김병욱, 박현우, 이남규, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Metal organic precursor; Molybdenum trioxide; Atomic layer deposition |
