| 초록 |
“Perovskite” has high intrinsic carrier mobility and ambipolar transport characteristics, so it has high expectations for use as a field-effect transistor (FET) device. However, since there are many problems to be solved in the charge transport mechanism, many studies are still needed. It shows a decrease in performance at room temperature. The biggest factor is the problem of screening the applied gate electric field by ion migration. We synthesized by adding SBLC (S-benzyl-L-cysteine) to MAPbI3 and fabricated an FET device, and measured its performance at 150K, 200K, and room temperature. As a result, FET device made with the MAPbI3+SBLC solution, it was confirmed that the field-effect was stably produced not only at 150K but also at 200K. By adding SBLC, it is expected that the low stability of MAPbI3 to temperature was improved. This result enables perovskite-FET measurements at higher temperatures, and further suggests that it can be a clue to several perovskite-FET problems. |
