| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 |
21권 1호, p.621 |
| 발표분야 |
에너지 |
| 제목 |
Low temperature anti reflection coating on P-type silicon solar cell using nano size SiO2/SiC nanocomposite |
| 초록 |
The antireflection (AR) coating in fabrication of silicon solar cell is an important step to achieve the high performance and long term stable solar cells. In this work, SiO2/SiC nanocomposite was prepared by low cost sol-gel process and utilized as AR materials for Si solar cells. The AR coating was performed in two steps: i) the sol-gel of precursor solution was coated on p-type Si-wafer by spin coating at 2000 rpm and ii) the coated wafer subjected to annealing at 500oC for 2 h. The crystalline properties revealed the formation of SiO2/SiC nanocomposite as seen the phases of SiC along SiO2. The SiO2/SiC nanocomposite AR coating on Si wafer significantly decreased the reflectance as compared to without AR coated Si-wafer, suggesting the good antireflecting nature of the prepared SiO2/SiC nanocomposite. The effect of AR coating with SiO2/SiC nanocomposite will be discussed in terms of electrical parameters of p-type silicon solar cell and reflection losses. |
| 저자 |
잔낫아즈미라, 양오봉, 이우진, M. Shaheer Akhtar, Zhen Yu Lia
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| 소속 |
전북대 |
| 키워드 |
anti-reflection coating; silicon carbide; silicon dioxide; nanocomposite
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| E-Mail |
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| 원문파일 |
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