| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Flexible NAND Flash Memory by Roll Transfer |
| 초록 | Flexible electronics have attracted attention due to their thin, light-weight and less-breaking merits. Especially, brisk researches on Si-based flexible device were conducted to take advantage of its exceptional electrical properties and CMOS process compatibility. To make the Si-based flexible device in practical use, it is important to develop a proper packaging technology for providing signal and power distribution, heat dissipation and mechanical protection. However, flexible packaging for Si-based flexible device which endures harsh repetitive bending conditions requires further investigations. In this study, we report a methodology for fabricating packaging-completed Si-based flexible device. Thin Si-based device was prepared on a temporary substrate through device bonding on glass wafer followed by bottom-Si elimination. Afterwards, the device was interconnected on the flexible printed circuit board (FPCB) through flip-chip bonding utilizing anisotropic conductive film (ACF). Finally, packaging-completed Si-based flexible NAND flash memory was realized showing highly elastic and resilient characteristics under various stress conditions. The interconnections maintained its low resistance during repetitive bending tests. Furthermore, the memory showed reliable memory operation regardless of its bending, demonstrating the usefulness of the method. |
| 저자 | Do Hyun Kim, Gyeong Cheol Park, Keon Jae Lee |
| 소속 | 한국과학기술원 (KAIST) |
| 키워드 | <P>NAND; memory; roll-to-roll; ACF; flexible</P> |
