| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Identified Bistable Centers in Oxides: Mobility and Instability |
| 초록 | Recently, the oxide-based thin-film transistors (TFTs) such as ZnO [1], InGaZnO4 [2], and ZnON [3] have attracted great attention as promising materials to replace Si due to the high electron mobility and uniformity. However, the realization of the high and stable field-effect mobility under bias illumination stress is the main hurdle in oxide TFTs. For example, when subjected to negative gate bias in the presence of visible light, the high performance oxide-based TFTs that exhibit high field effect mobility undergo relatively large shifts in threshold voltage [3]. It is of great importance to understand the microscopic origins that provide both high TFT device performance and stability. Therefore, in this talk, we introduce some possible bistable centers to interpret the influence of the hydrogen impurities or native defects on the electrical properties of oxide materials [4-7]. We will discuss that the double-faced nature of the revealed impurities and defects is a key to understand the field-effect mobility and electrical instability in the oxide-based TFTs. [1] Ü. Özgür, D. Hofstetter, and H. Morkoç, Proc. IEEE 98, 1255 (2010). [2] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004). [3] H.-S. Kim, S. H. Jeon, J. S. Park, T. S. Kim, K. S. Son, J.-B. Seon, S.-J. Seo, S.-J. Kim, E. Lee, J. G. Chung, H. Lee, S. Han, M. Ryu, S. Y. Lee and K. Kim, Sci. Rep. 3, 1459 (2013). [4] H.-H. Nahm, Y.-S. Kim, and D. H. Kim, Phys. Status Solidi B 249, 1277 (2012). [5] H.-H. Nahm, C. H. Park, and Y.-S. Kim, Sci. Rep. 4, 4124 (2014). [6] Y. Kang, B. D. Ahn, J. H. Song, Y. G. Mo, H.-H. Nahm, S. Han, and J. K. Jeong, Advanced Electronic Materials 1, 1400006 (2015). [7] H. Song, Y. Kang, H.-H. Nahm, and S. Han, Physica Status Solidi B 252, 1872 (2015). |
| 저자 | 남호현 |
| 소속 | Graduate School of Nanoscience and Technology |
| 키워드 | Amorphous Oxide Semiconductor; Instability; Mobility; Hydrogen |
