| 학회 |
한국화학공학회 |
| 학술대회 |
2014년 봄 (04/23 ~ 04/25, 창원컨벤션센터) |
| 권호 |
20권 1호, p.709 |
| 발표분야 |
재료 |
| 제목 |
Realistic and real-time contact hole etch process simulation: 3D-SPEED |
| 초록 |
Recently semiconductor field engineers in plasma etching processes have made desperate efforts to deal with anomalous behaviors through simulation such as sidewall bowing, and twisting profile. However, the inherent complexities of this research field make current issues hard to be supported by academic researches, leading to big gaps between industries and academic sides. As an effort to meet great goal toward predictable process, we have developed a 3D feature profile simulator based on experimental data in our previous works, which was named as 3D-SPEED. In this work, multiple material etch simulations are demonstrated on the basis of realistic surface chemical reaction in fluorocarbon/CHF plasma. Furthermore, massive computation and memory issues are one of main issues in these simulations. Finally, we believe that our approach will open a new way to bridge academic research and industrial long-pending trouble in semiconductor research field. |
| 저자 |
육영근1, 임연호1, 장원석2, 유동훈3, 최광성1, 조덕균1, 이세아1
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| 소속 |
1전북대, 2핵융합(연), 3경원테크 |
| 키워드 |
3D simulation; fluorocarbon plasma; etch process
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| E-Mail |
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| VOD |
VOD 보기 |
| 원문파일 |
초록 보기 |
