| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
B. Nanomaterials and Processing Technology((나노소재기술) |
| 제목 |
Facile and clean release of Si nanowires from substrate using bubble generated by chemical reaction |
| 초록 |
Si nanowires (SiNWs) has been widely applied to various fields, ranging from nanoelectronics, photovoltaics, sensors to thermoelectrics, etc. Metal-assisted electroless etching (MEE) is a fast and simple process for the preparation of vertical SiNWs on Si substrate, compared to high-temperature chemical vapor deposition process. The facile and clean release of those SiNWs from substrate is essential step for further applications. Here, we present the wet release of formed SiNWs using gas bubble generated as a reaction by-product, during the removal of Ag dendrite layer and nanoparticles formed in MEE process with nitric acid. Relevant mechanism and effect of various parameters has been systematically investigated. The proposed method would be very helpful for various applications that need released SiNWs. |
| 저자 |
Sung Soo Yun1, Dahl-Young Khang2
|
| 소속 |
1Department of Materials Science and Engineering, 2Yonsei Univ. |
| 키워드 |
silicon nanowire; wet release; metal-assisted electroless etching
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| E-Mail |
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