| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 | Fabrication and Characterization of Sol-Gel Processed Cu2ZnSnS4 Absorber Layer for Thin Film Solar Cells |
| 초록 | CuInxGa1-xSe2 (CIGS) has attracted much attention in terms of its high conversion efficiency up to 20%. However, due to expensive In and Ga, and toxic Se, Cu2ZnSnS4 (CZTS) is suggested as a promising substitute, which is the quaternary semiconductor consisting of nontoxic and earth abundant elements. The crystal structure of CZTS is analogous to that of CIGS, the optical bandgap is 1.4-1.5eV and the absorption coefficient is over 104cm-1. Non-vacuum, solution-based approaches are preferred in terms of intermixing of constituents at a molecular level and controlling the composition. In addition, since they enable formation of homogeneous films on large area with high throughput, it is advantageous to lower the cost for solar cell fabrication. In this study, the CZTS absorber layer was fabricated by sol-gel spin-coating process. The CZTS precursor solution was prepared by using copper chloride, zinc acetate, tin chloride and thiourea dissolved in 2-methoxyethanol. The solution was spin coated on soda lime glass substrates and dried at 135℃. After heat treatment at 500℃ without sulfurization, the films showed (112), (200), and (312) planes of kesterite CZTS confirmed by X-ray diffraction pattern. Depending on the precursor composition and heating profile, the phase and morphology of the films were characterized. The chemical composition of the films was almost stoichiochiometric and optical band gap was 1.55eV at room temperature. Also, the CZTS thin film prepared by sol-gel process was applied to the absorber layer of thin film solar cells. |
| 저자 | 박형진, 황영환, 배병수 |
| 소속 | KAIST |
| 키워드 | Cu2ZnSnS4; Solar cells; Thin film absorber layer; Sol-gel process |
