| 학회 | 한국화학공학회 |
| 학술대회 | 2017년 봄 (04/26 ~ 04/28, ICC 제주) |
| 권호 | 23권 1호, p.1069 |
| 발표분야 | 재료 |
| 제목 | Study on etch characteristics of nanometer-scale patterned CoFeB magnetic thin films using various etch gases |
| 초록 | Spin transfer torque magnetic random access memory receives a great attention as a next generation memory device owing to the advantages including high speed, high density, high performance, low operating voltage and unlimited endurance. As the size of magnetic tunnel junction stacks (MTJs) is decreased, perpendicular magnetic anisotropy (PMA) needs to be realized for high density. To carry out PMA in MTJs, the MTJs should be composed of multilayers including CoFeB thin films. In early studies, micro-patterned CoFeB thin films had comparatively good etch profiles using various range of gas mixture such as CH3COOH/Ar, CH3OH/Ar and CH4/O2/Ar. In this study, the etch characteristics of nano-patterned CoFeB thin films have been investigated using inductively coupled plasma reactive ion etching under various gas mixtures. The surface chemistry of CoFeB thin films with a variety of etch gases will be analyzed and the etch mechanism also will be investigated. [Acknowledgements]This research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning.(2009-0082580) |
| 저자 | 조두현, 이재용, 최재상, 정지원 |
| 소속 | 인하대 |
| 키워드 | 화공소재 전반 |
| 원문파일 | 초록 보기 |
