| 학회 |
한국화학공학회 |
| 학술대회 |
2004년 가을 (10/29 ~ 10/30, 호서대학교(아산캠퍼스)) |
| 권호 |
10권 2호, p.2047 |
| 발표분야 |
재료 |
| 제목 |
A Study of Diamond Film Growth by Thin Film Coating of Zinc on Si |
| 초록 |
Diamond thin films have been deposited on a variety of substrates using different techniques. Hot Filament Chemical Vapor Deposition has been a most commonly used technique due to its simple instrumentation and effectiveness in producing high quality diamond films. However the substrate temperature has to be maintained at relatively high temperature above ~ 700oC. This has resulted into use of substrates or coatings with melting point higher than substrate temperature held during the diamond film growth. In this communication we show using Atomic Force Microscopy, Scanning Electron Microscopy and Raman Spectroscopy that even low melting point zinc on scratched Si (100) substrate could produce good quality diamond film at substrate temperature ~ 750oC. A liquid substrate can support the growth of diamond film. |
| 저자 |
Dar Mushtaq Ahmad1, S. G. Ansari2, 조중희1, 서형기1, 김길성1, 김영순1, 신형식1
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| 소속 |
1전북대, 2Japan Advanced Institute of Science and Technology |
| 키워드 |
HFCVD; Diamond Film; Zinc Thin Film; Raman
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| E-Mail |
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| VOD |
VOD 보기 |
| 원문파일 |
초록 보기 |
