| 초록 |
Effects of graphene quantum dots (GQDs) layer situated between SiO2 scaffold layers and blocking layer in perovskite solar cell were explored. Interestingly, the cell performances, including Jsc, Voc, and FF, of GQDs layer inserted-cells increased compared to that of reference cells. The cells with the GQDs layer (13.09%) showed 16 % enhanced power conversion efficiency than that without it (11.29%). Improvements of cell performances were attributed to the inserted GQDs layer, which showed two advantageous effects. First, the GQDs in the cells could serve as a fast bridge to facilitate the electron injection from perovskite into TiO2 blocking layer, leading to a significantly enhanced photocurrent. Second, GQDs layer played a key role in preventing shunt between HTM and blocking layer through the defects of perovskite layer, resulting in inhibition of charge recombination and thus enhancements of Voc and FF. |
