| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Heterostructure synthesis of two-dimensional semiconducting layered materials |
| 초록 | The growth of atomically thin transition-metal dichalcogenides (TMDs) with the controllable number of layers is a key issue for next generation nanoelectronics. Those individual TMD monolayers can be adhered laterally to from in-plane heterostructures, however manufacturing of such artificial heterostructures with atomically clean and sharp interfaces is challenging. Here, we report the synthesis of MoSe2 – WSe2 lateral heterostructures by in situ one step chemical vapor deposition of the vapour-phase reactants during growth of these TMDs material. The growth of such lateral structure can be available for new device functionalities, such as in-plane transistors and diodes. Here, we are able to synthesis lateral heterstructure with MoSe2 – WSe2 layers because they have the same honeycomb structure, in which a planar triangular lattice of Se atoms is sandwiched between two planes of Mo and W atoms, and because their lattice constants are closely matched. We demonstrate lateral heterostructure using the combination of WSe2 and MoSe2, both of which monolayer have recently been exhibited to have striking direct band gap semiconducting and optical properties. We employ chemical vapor deposition using promoter, Mo, W and Se source seperately, typically heated to 800℃ under a flow of hydrogen carrier gas and argon gas in a one-inch tube furnace. |
| 저자 | 유우종, 강원태 |
| 소속 | 성균관대 |
| 키워드 | <P>Transition metal dichalcogenides; TMDs; chemical vapor deposition; heterostructure</P> |
