화학공학소재연구정보센터
학회 한국재료학회
학술대회 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔)
권호 22권 2호
발표분야 G. 나노/박막 재료 분과
제목 Electric-field induced si-graphene heterostructure solar cell using top gate
초록 Abstract : Silicon has reasonably good characteristics on electron, hole mobility with abundant and its price. With 2-D sinlge-layer Graphene/n-Si heterojunction solar cell shows that in one sun condition exhibit power conversion efficiency(PCE) of 10.1% with its gate electric field. This  photovoltaic effect was achieved by applying gate voltage to the Schottky junction of the heterostructure solar cell. Energy band diagram shows that Schottky barrier between Si and graphene could be adjust by the external electric field. Because of the fermi level of the graphene can be tuned by external gate voltage, we can control the Schottkky barrier of the heterostructure solar cell. By multiplying the applied gate voltage and leakage current, we can get the consumption of electrical power. The ratio between generated power of solar cell and consumption electrical power is remarkable.  Since we use the graphene as the top gate electrode, most of the sun light can penetrate into the active area.  Anti-reflective coating of PMMA layer also act as increasing factor of solar cell.



참고 문헌

[1] Woo jong yu, Yuan Liu, Anxiang Yin, Zheng Li, Yu Huang and Xiangfeng Duan, “Highly efficient gate-tunable photocurrent   generaton in vertical heterostructures of layered materials” “ Nature nanotechnology” 27 October 2013  
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[3] Xinming Li, Hongwei Zhu, Dehai Wu, “graphene-on-Silicon Schottky Junction Solar Cells” “Advanced materials” 9 April 2010
[4] X. Miao, S. Tongay, A. Heebard, “High efficiency Graphene Solar Cells by Chemcal Doping”, “Nano Letters” 3 May 2012
저자 원의연, 유우종
소속 성균관대
키워드 graphene; heterostructure; schottky barrier
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