| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 | Al2O3 게이트 절연물질을 사용한 InGaZnO thin film transistors 의 성능향상 |
| 초록 | Recently, thin-film-transistors (TFTs) that were deposited at low temperature have attracted lots of attentions in various applications such as sensors, solar cell, display backplane, and memory devices. Flexible TFTs required the high quality channel layers with high mobility and large-area uniformity on plastic substrates. During past ten years, Si based transistors had many problems including high process temperature, non-stability, and low mobility. To solve those problems, amorphous oxide semiconductors are proposed. Amorphous oxide semiconductors based TFTs are showed high mobility, large-area uniformity, and time. The nominal gate oxides grown by chemical vapor deposition such s SiNx and SiOx required thermal at appropriate temperature energy. The best choice for the deposition of gate oxides on flexible substrates is low temperature grown sputtering and atomic layer deposition (ALD). The well-known high-k materials are HfO2, Al2O3 and Si3N4. High-k materials have a low leakage current and at least equivalent capacitance, thickness. This study investigated the effect of growth temperatures of ALD grown Al2O3 layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments. After ITO was wet-chemically etched with HCl : HNO3 = 3:1, Al2O3 layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and O2/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at 300 oC and nitrogen atmosphere for 1 hour by rapid thermal treatment .The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter. |
| 저자 | 우창호, 김영이, 안철현, 조형균 |
| 소속 | 성균관대 |
| 키워드 | Transparent; High-k; InGaZnO; Oxide channel |
