| 학회 |
한국재료학회 |
| 학술대회 |
2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 |
15권 2호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
Sputtering에 의해 성장된 ZnO active layer를 이용한 TFT 소자의 annealing에 따른 특성평가 |
| 초록 |
This study examined the effect of thermal annealing of the channel layers on the device performance of ZnO thin-film-transistors (TFTs). Thermal annealing of the ZnO channel layers grown by sputtering was performed at various temperatures under a nitrogen atmosphere. The electrical resistivity of the ZnO layers decreased with increasing annealing temperature due to the formation of oxygen vacancies, and showed no hard saturation in the TFT devices thermal-annealed at higher temperatures. The thermal treatment of the channel layer at 350 oC caused an increase in field-effect mobility compared to those of the TFT with the as-grown channel layer. In addition, the thermal-annealed TFT showed high stability in the threshold voltage variations with ∆V of ＜ 2.1 V. The results suggest that thermal annealing of the ZnO channel layer at an appropriate temperature is a significant factor for improving the device performance. |
| 저자 |
안철현, 서동규, 우창호, 조형균
|
| 소속 |
성균관대 |
| 키워드 |
TFT; ZnO; annealing
|
| E-Mail |
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