| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 봄 (04/25 ~ 04/27, 제주 ICC) |
| 권호 |
18권 1호, p.955 |
| 발표분야 |
재료 |
| 제목 |
Role of Hydrogen Chloride in Atomic Layer Deposition of TiO2 Thin Films from Titanium Tetrachloride and Water |
| 초록 |
Atomic layer deposition (ALD) of TiO2 thin films has been intensively studied by using TiCl4 and H2O as Ti and O precursors, respectively. In the growth of TiO2 via ALD chemistry between TiCl4 and H2O, it is believed that gaseous HCl molecules are evolved as a byproduct in both the first- and the second-half reactions. However the role of HCl is not clear yet while several groups have investigated the growth mechanism of TiO2 thin film by using various in situ monitoring techniques and theoretical simulations. In this work we have performed modified ALD sequences in which exposure and purging steps of gaseous HCl molecules were intentionally inserted in the typical sequence of TiCl4 exposure – purging – H2O exposure – purge after the first- or the second-half reactions. We discuss the role of HCl and contributions of various chemisorbed species by comparing the growth behaviors of TiO2 in the typical and modified ALD sequences. |
| 저자 |
Yinshi Li, 박인혜, 임지나, Wenhao Zhou, 민요셉
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| 소속 |
건국대 |
| 키워드 |
atomic layer deposition; TiO2; HCl; mechanism
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| E-Mail |
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| 원문파일 |
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