| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 봄 (04/10 ~ 04/11, 대전 컨벤션센터) |
| 권호 |
39권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Polyimide gate insulators surface-modified with the metal oxide interlayer for solution-processed ZnO TFTs |
| 초록 |
Solution-processed metal oxide thin film transistor (TFTs) have been extensively studied because they are applicable to low-cost, high-performance and large area electronics. Although polymer gate insulators have excellent processability, polymer gate insulators for solution-processed metal oxide TFTs have been rarely reported due to due to dissimilarities in bonding characteristics between the metal oxide semiconductor and the polymer gate insulator. We report the solution-processed metal oxide interlayer between the metal oxide semiconductor and the polymer gate insulator. The ZnO TFTs with the interlayer exhibited excellent TFT performance. |
| 저자 |
유성미1, 윤준영2, 류주환1, 김윤호2, 가재원2, 이미혜1, 장광석1
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| 소속 |
1한국화학(연), 2충남대 |
| 키워드 |
Polymer gate insulator; Polymer dielectric; ZnO thin-film transistor; Surface-modification
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| E-Mail |
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