화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2022년 봄 (04/06 ~ 04/08, 대전컨벤션센터)
권호 47권 1호
발표분야 분자전자 부문위원회
제목 Gate-Deterministic Remote Doping Enables Highly Retentive Graphene-MXene Hybrid Memory Devices on Plastic
초록 In this work, we present a highly retentive and synaptic-functional transistor memory device architecture based on the gate-deterministic remote doping of graphene via surface-oxidized Ti3C2TX MXene nano-floating-gates (NFG). Interestingly, unlike the conventional NFG-embedded architecture, the introduction of core/shell-like MXene under an electrolyte-gated graphene field-effect transistor (GFET) architecture induced a cooperative evolution of the hysteresis loop associated with ionic motion in the electrolyte gates and charge trapping/detrapping in the nanoflakes, resulting in a deterministic remote doping of the graphene layer. The resulting device exhibited a highly retentive memory behavior. In addition, synaptic functions having mechanical flexibility could be successfully emulated using MXene-based GFETs fabricated on a flexible polyethylene naphthalate substrate.
저자 김성찬1, 조새벽1, 김지현1, 이동준1, 최윤영2, 김도환3, 강주훈1, 조정호4
소속 1성균관대, 2일리노이 대, 3한양대, 4연세대
키워드 graphene field-effect transistor; Ti3C2TX MXene nano flakes; nano-floating-gate; memory device; synaptic-functional transistor
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