| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics |
| 초록 |
We examined the origins and mechanisms underlying the gate-bias stress instabilities observed in OFETs by quantitatively investigating both the physico-chemical properties and the electronic structures of the interfaces between p-type pentacene layers and a series of hydrophobic polymer dielectrics containing methoxy-, methyl-, or fluoro-functionalized polystyrene moieties. We demonstrated the existence of an energetic barrier to charge trapping related to the gate-bias stress instability at the semiconductor/gate dielectric interface. This energetic barrier concept was supported both by the gate-bias stress instability tests, performed over a range of applied voltage levels and durations, and by the electronic structures of the semiconductor/gate dielectric interface, as characterized by ultraviolet photoemission spectroscopy (UPS). |
| 저자 |
김지예1, 안태규1, 김경훈1, 김세현2, 박찬언1
|
| 소속 |
1포항공과대, 2영남대 |
| 키워드 |
organic field-effect transistors; gate-bias stabilities; fluorinated polymers
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| E-Mail |
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