| 학회 |
한국고분자학회 |
| 학술대회 |
2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 |
27권 2호, p.84 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Synthesis and Properties of Porogen-grafted Polysilsequioxanes for Low Dielectric Films |
| 초록 |
Fully cured polymethylsilsesquioxanes (PMSSQ) shows a lower dielectric constant(k=2.6-2.9) than SiO2 (k=4.0-4.2). In order to obtain a further lower dielectric constant, we have synthesized copolymers and terpolymers using methyltrimethoxysilane (MTMS), bis-trimethoxysilylethane (BTMSE), methy poly(propyleneoxide)oxypropyltrimethoxy-silane (M-ppo), to graft polypropyleneoxide (PPO) block, which is decomposed and produces voids around 380oC. Copolymers and terpolymers are synthesized in THF solutions in the presence of acid catalysts. The temperature of decomposition of PPO block is confirmed by TGA data. The mechanical property changes upon decomposition of PPO block are studied by DMA experiment. Thin films are prepared from precursor solutions by spin-coating onto Si wafer and curing to 420-450 oC. As the amount of M-ppo in copoymers or terpolymers increases, the porosities of the cured films increase, but the extent of pore collapse also increases. In order to increase the porosity, a porogen has been added to control the size of PPO domains and hence to reduce the pore collapse. |
| 저자 |
김형은1, 김운천2, 노현욱3, 황승연, 이진규, 차국헌*, 이희우**, 윤도영
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| 소속 |
1서울대, 2*서울대, 3**서강대 |
| 키워드 |
Polysilsequioxanes; Low Dielectric
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| E-Mail |
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