| 초록 |
Compared to bottom-gate OFETs, top-gate OFETs have been less widely used due to difficulties in the deposition of top gate dielectric layers using a solution process without dissolution or swelling of the underlying organic semiconductors. In order to solve this problem, we developed solventless processible dielectric system. A mercapto-functionalized polysiloxane, poly[(mercaptopropyl)methylsiloxane], were synthesized. The polymer is in a state of viscous liquid, and can be spin-coated on a Si wafer. With using 2-hydroxy-2-methylpropiophenone as a photoinitiator, the polysiloxane film was cured to be a film of 850nm thickness. The dielectric constant and breakdown voltage of the film were measured via device fabrication of capacitor, showing good electrical properties as a gate dielectric. The polysiloxane dielectrics can be successfully patterned in a negative-tone upon irradiation at 365 nm. |
