| 학회 |
한국공업화학회 |
| 학술대회 |
2015년 가을 (11/04 ~ 11/06, 제주국제컨벤션센터(ICCJEJU)) |
| 권호 |
19권 2호 |
| 발표분야 |
그래핀특집(1. 다차원 그래핀 구조제어기술, 2. 플렉시블 그래핀 전극기술) |
| 제목 |
Interaction between hydrogen molecules and 2D materials |
| 초록 |
The studies of the interaction between hydrogen and graphene have been increasingly required due to indispensable modulation of electronic structure in graphene for device applications and a possibility of graphene as a hydrogen storage material. Here we report the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphenes as a function of H2 gas pressure up to 24 bars from 300 K to 345 K. Upon H2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping. It was confirmed by Raman signature, increases in the interlayer distance, decrease of d-spacing, and thermoelectric power. These results demonstrate the dissociative H2 adsorption due to the self-catalytic effect of graphene. Using this property, the local doping in a single graphene was achieved. |
| 저자 |
박영우1, 이상욱2, 전용석2, 강호진1, 박민1, 홍성주1, 김병훈3
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| 소속 |
1서울대, 2건국대, 3인천대 |
| 키워드 |
graphene; H2 exposure; electron doping; thermoelectric power; local doping
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| E-Mail |
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