| 초록 |
Cu2ZnSn(S,Se)4 (CZTSSe) is an attractive alternative to CdTe, CIGS, and silicon-based solar cells. In this study, the Mg and Ga co-doped ZnO(MGZO) thin films that acting as a window layer in CZTSSe TFSCs were optimized to improve the device efficiency. MGZO thin films were deposited on a soda lime glass (SLG) substrate using radio frequency (RF) magnetron sputtering with the varying of the Ga concentration. The structural, morphological, optical and electrical properties of MGZO thin films and the effect of CZTSSe TFSC on the efficiency of different Ga concentration were investigated. All of the deposited thin films showed a uniform microstructure, high optical bandgap energy of ~3.73eV with a transmittance of ~88% in the visible region, although they possess comparable resistivity differences. Also transmittance of infrared region is increased at nearby 1% Ga concentration. As the Ga concentration increases, the electrical properties of the thin film are greatly increases. On the other hand, MGZO thin films proceeding at low Ga concentration were showed decreased electrical properties with the low resistivity, a low mobility, and a low sheet resistance. These are resulted in improved device efficiency for CZTSSe TFSCs with deposited MGZO window layers due to their superior optoelectronic properties. These results show a very promising TCO materials for CZTSSe TFSCs applications. |
