Local interaction imaging by SiGe quantum dot probe

Jeong Y; Hirade M; Kokawa R; Yamada H; Kobayashi K; Oyabu N; Arai T; Sasahara A; Tomitori M

Current Applied Physics, Vol.12, No.2, 581-584, 2012

DOI10.1016/j.cap.2011.09.005 Export Citation

Local interaction imaging by SiGe quantum dot probe

Jeong Y, Hirade M, Kokawa R, Yamada H, Kobayashi K, Oyabu N, Arai T, Sasahara A, Tomitori M

Local interaction imaging of cleaved InAs surface (110) using a high aspect ratio (HAR) SiGe quantum dot (QD) probe was demonstrated by frequency-modulation mode noncontact atomic force microscopy under atmospheric pressure. The local contrast image with pronounced brightness is mainly attributed to no contact potential difference between the HAR SiGe-QD probe apex and the sample surface, and low frequency-change of the HAR SiGe-QD probe. (C) 2011 Elsevier B.V. All rights reserved.

Keywords:FM nc-AFM;Contact potential difference;Quantum dot;High aspect ratio;InAs