Nb-doped SnO2 thin films were deposited on glass substrate by pulsed laser deposition. The structural, optical and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature and thickness. The structural properties of electrodes were studied by X-ray diffraction analysis and field emission scanning electron microscope images. The Optical properties of electrodes were studied by recording the UV-visible transmittance curves. The electrical properties were investigated by the four-point probe sheet resistance and hall-effect measurements. For 500 nm thick SnO2: 4 wt.% Nb2O5 film deposited at 500 degrees C and 60 m Torr of oxygen partial pressure, an electrical resistivity 6.65 x 10(-3) Omega cm with an average optical transmittance in visible range (400-800 nm) of 85%, and an optical band gap of 4.27 eV was observed. (C) 2010 Elsevier B.V. All rights reserved.