Au/STO/p-Si/Au structure is fabricated using pulsed laser deposition technique at room temperature. The Current-voltage (I-V) characteristics of the device show rectification behavior. Various junction parameters such as ideality factor, barrier height and series resistance is determined using conventional forward bias I-V characteristics, Cheung method and Norde's function. Au/STO/p-Si/Au structure shows non-ideal diode characteristics with the value of ideality factor of similar to 5.1 and barrier height of similar to 0.40 eV. (C) 2008 Elsevier B.V. All rights reserved.