Fabrication of high quality diamond either for gemmological or for technological applications, is still a challenge. The control of impurity incorporation for doping or to modify the crystal colour should be still improved. The present contribution reports availability of nearly defect free HPHT (high pressure high temperature) diamond in terms of dislocations and point defects. Cathodoluminescence (CL) transitions related to point defects or dislocations (A-band) are not observed and only some individual dislocations are revealed by X-ray topography (topo-X). CL spectra are dominated by the excitonic-related transistions and the boron incorporation, estimated from the phonon-replica relative intensities, is around 10(16) cm(-3) that corroborate the values estimated by FTIR. Such amount of B gives a pale blue colour to the diamond sintetized monocrystal. The latter crystals are grown at the Institut de Monocristales S.L. for jewellery applications, but their use for semiconducting applications is also envisaged after the highlights of the present study. (C) 2012 Elsevier B.V. All rights reserved.