The paper deals with synthesis of Sb doped ZnO nanowire by considering Si coated with Sb and Au as substrate using carbothermal evaporation method. The horizontally oriented Sb doped ZnO nanowires with a diameter of 1 mu m synthesized at 900 degrees C, which is quite high as compared to the Pure ZnO nanowires generated without the influence of Sb at 900 degrees C. The nanowire synthesized at 900 degrees C showed a measurable lower angle of about 0.06. from XRD and suppression of A(1)T and E-1(L0) modes in Raman spectroscopic, this confirms the incorporation of Sb in ZnO lattice. The strong exciton emission and weak deep-level emission from room temperature PL and Strong emission attributed to the radiant recombination from neutral-acceptor-bound exciton (A(0)X) peak accompanied by two strong and broad emission of donor acceptor pair (DAP) from low temperature PL, this confirms the use of Sb as an acceptor for ZnO. (C) 2011 Elsevier B. V. All rights reserved.