In2O3 thin films (100 nm thick) have been deposited by reactive evaporation of indium, in an oxygen partial atmosphere. Conductive (sigma = 3.5 x 10(3) S/cm) and transparent films are obtained using the following experimental conditions: oxygen partial pressure = 1 x 10(-1) Pa, substrate temperature = 300 degrees C and deposition rate = 0.02 nm/s. Layers of this In2O3 thick of 5 nm have been introduced in AZO/In2O3 and FTO/In2O3 multilayer anode structures. The performances of organic photovoltaic cells, based on the couple CuPc/C-60, are studied using the anode as parameter. In addition to these bilayers, other structures have been used as anode: AZO, FTO, AZO/In2O3/MoO3, FTO/In2O3/MoO3 and FTO/MoO3. It is shown that the use of the In2O3 film in the bilayer structures improves significantly the cell performances. However the open circuit voltage is quite small while better efficiencies are achieved when MoO3 is present. These results are discussed in the light of surface roughness and surface work function of the different anodes. (C) 2011 Elsevier B.V. All rights reserved.