Large-area, high-density silicon-based nanotips were fabricated using electrochemical lithography. The morphology and optical properties of the samples were characterized by atomic force microscopy and photoluminescence. The distribution and size of the silicon-based nanotips were uniform. Two photoluminescence peaks were observed at 585 and 620 nm. The peak centered at 585 nm exhibited a narrow full-width at half maximum. No evident peak energy shift was observed when the measurement temperature was increased from 10 K to room temperature, which suggested that the photoluminescence should be attributed to the interface states and/or defects in the silicon-based nanotips. (C) 2011 Elsevier B. V. All rights reserved.