Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Xiang PH; Asanuma S; Yamada H; Inoue IH; Sato H; Akoh H; Sawa A; Ueno K; Yuan HT; Shimotani H; Kawasaki M; Iwasa Y

Advanced Materials, Vol.23, No.48, 5822-5822, 2011

DOI10.1002/adma.201102968 Export Citation

Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Xiang PH, Asanuma S, Yamada H, Inoue IH, Sato H, Akoh H, Sawa A, Ueno K, Yuan HT, Shimotani H, Kawasaki M, Iwasa Y

A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.

Keywords:correlated electron oxides;phase diagram;metal-insulator transition;field-effect transistors